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BAS116GW
BAS116GW
主要參數(shù) 
Low leakage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.

特性

  • High switching speed: trr = 0.8 μs

  • Low leakage current: IR = 3 pA

  • Repetitive peak reverse voltage VRRM≤ 85V

  • Low capacitance: Cd= 2 pF

  • Small SMD plastic package

  • AEC-Q101 qualified


目標(biāo)應(yīng)用

  • Low-leakage current applications

  • General-purpose switching


參數(shù)類型

型號Package versionPackage nameSize (mm)VR [max] (V)IFSM [max] (A)VF [max] (mV)IR [max] (nA)IFRM (mA)Configurationtrr [max] (ns)
trr [max]
IF [max] (mA)Cd [max] (pF)
BAS116GWSOD123SOD1232.675 x 1.6 x 1.157541250@IF=150mA5@VR=75V500single30002152